Synthesis and field-emission characteristics of SiC nanowire forest
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논문명 | Synthesis and field-emission characteristics of SiC nanowire forest |
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저자 | Dongju Lee, Sung Ho Song* |
저널명 | International Journal of Materials Research |
게재년월 | 2016/10/13 |
Vol. pp |
Silicon carbide nanowire forests were successfully synthesized via a vapor–liquid–solid process. The synthesized SiC nanowires had planar stacking faults perpendicular to the nanowire axis, diameters of 70 – 180 nm and lengths of tens to hundreds of micrometers, and grew along the [111] orientation. The SiC nanowire forest was characterized in a field emitter application and exhibited excellent field emission properties. Furthermore, we carried out in-depth investigations into the growth mechanism of the SiC nanowires through adjusting the growth conditions.